Silicon Carbide

• Silicon Carbide Green 63C. Grinding Grain F30

  Silicon carbide is a ceramic material with outstanding hardness surpassed only by diamond, cubic boron nitride and boron carbide.

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• Silicon Carbide Black 64C. Grinding Grain F24

  Black silicon carbide is a very hard and ribbed material.

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• Silicon Carbide Black 63C Grinding Grain F24

  Being synthetic, silicon carbide adopts the properties of natural moissanite.

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• Black SiC

  Black SiC, as a third-generation semiconductor material, is a relatively hot material in recent years.

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• Black Carborundum

  Black Carborundum has physical properties such as high thermal conductivity, high breakdown field strength, and high saturated electron drift rate.

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• Green Silicon Carbide

  Brand: ZhenAn. Product name: Green Silicon Carbide. Purity: 98%-99.9999%. Size: Customized. Hardness: Mohs 9.4 / 2600 Knoop. Melting Point: Dissociated at about 2600 ℃. Maximum Operating Temperature:

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• Black Silicon Carbide

  Brand: ZhenAn. Product name: Black Silicon Carbide. SiC Content: 98.5% Min. Bulk density: 1.45-1.56g/cm³. Ture density: 3.12 g/cm³. Crystalsystem: Hexagonal. Micro Hardness: HV3100-3280.

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• Sintered Silicon Carbide

  Brand: ZhenAn. Product name: Sintered Silicon Carbide. Temperature of Application: 1600 °C. Density: > 3.08 g/cm³. Open Porosity: < 0.1%. Bending Strength: 480-600 MPa. Broken Strength: 1950-2600

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• Silicon Carbide Powder

  Brand: ZhenAn. Product name: Silicon Carbide Powder. Purity: 99%. Particle size: 50nm, 500nm, 1um, <45um, etc. Melting poning: 2700 °C(lit.). Density: 3.22 g/mL at 25 °C(lit.). Package Type:

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• Silicon Carbide Grains

  Brand: ZhenAn. Product name: Silicon Carbide Grains. Purity: 99%. Particle size: 50nm, 500nm, 1um, <45um, etc. Melting poning: 2700 °C(lit.). Density: 3.22 g/mL at 25 °C(lit.). Package Type:

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